KSP92 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Transistor

High Voltage Transistor
KSP92/93
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: KSP92
: KSP93
V_CEO
Collector-Emitter Voltage
: KSP92
: KSP93
V_EBO
I_C
P_C
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T_a=25°C)
Derate above 25°C
P_C
Collector Power Dissipation (T_C=25°C)
Derate above 25°C
T_J
T_STG
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Base 3. Collector
Value
-300
-200
-300
-200
-5
-500
625
5
1.5
12
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
mW/°C
W
mW/°C
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CBO
Parameter
Collector-Base Breakdown Voltage
: KSP92
: KSP93
Test Condition
I_C= -100µA, I_E=0
BV_CEO
* Collector-Emitter Breakdown Voltage
: KSP92
: KSP93
I_C= -1mA, I_B=0
BV_EBO
I_CBO
I_EBO
h_FE
Emitter-Base Breakdown Voltage
Collector Cur-off Current
: KSP92
: KSP93
Emitter Cut-off Current
* DC Current Gain
V_CE (sat) *Collector-Emitter Saturation Voltage
V_BE (sat) * Base-Emitter Saturation Voltage
f_T
Current Gain Bandwidth Product
C_ob
Output Capacitance
: KSP92
: KSP93
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_E= -100µA, I_C=0
V_CB= -200V, I_E=0
V_CB= -160V, I_E=0
V_EB= -3V, I_C=0
V_CE= -10V, I_C= -1mA
V_CE= -10V, I_C= -10mA
V_CE= -10V, I_C= -30mA
I_C= -20mA, I_B= -2mA
I_C= -20mA, I_B= -2mA
V_CE= -20V, I_C= -10mA, f=100MHz
V_CB= -20V, I_E=0
f=1MHz
Min.
-300
-200
-300
-200
-5
25
40
25
50
Max. Units
V
V
V
V
V
-0.25
µA
-0.25
µA
-0.10
µA
-0.50
-0.90
6
8
V
V
MHz
pF
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001