KSP8599TA Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Transistor

KSP8598/8599
Amplifier Transistor
• Collector-Emitter Voltage: V_CEO= KSP8598: 60V
KSP8599: 80V
• Collector Power Dissipation: P_C (max)=625mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: KSP8598
: KSP8599
V_CEO
Collector-Emitter Voltage
: KSP8598
: KSP8599
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-80
-60
-80
-5
-500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CBO
Parameter
Collector-Base Breakdown Voltage
: KSP8598
: KSP8599
Test Condition
I_C= -100µA, I_E=0
BV_CEO
* Collector-Emitter Breakdown Voltage
: KSP8598
: KSP8599
I_C= -10mA, I_B=0
BV_EBO
I_CBO
I_CEO
I_EBO
h_FE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP8598
: KSP8599
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
V_CE (sat)
V_BE (on)
f_T
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
: KSP8598
: KSP8599
Current Gain Bandwidth Product
I_E= -10µA, I_C=0
V_CB= -60V, I_E=0
V_CB= -80V, I_E=0
V_CE= -60V, I_B=0
V_EB= -4V, I_C=0
V_CE= -5V, I_C= -1mA
V_CE= -5V, I_C= -10mA
V_CE= -5V, I_C= -100mA
I_C= -100mA, I_B= -5mA
I_C= -100mA, I_B= -10mA
V_CE= -5V, I_C= -1mA
V_CE= -5V, I_C= -10mA
V_CE= -5V, I_C= -10mA
f=100MHz
C_ob
Output Capacitance
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V_CB= -5V, I_E=0
f=1MHz
Min.
-60
-80
-60
-80
-5
100
100
75
-0.5
-0.6
150
Max.
-100
-100
-100
-100
300
Units
V
V
V
V
V
nA
nA
nA
nA
-0.4
V
-0.3
V
-0.7
V
-0.8
V
MHz
8
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001