 English |
|
|
|
|
|
|
|
| KSP8098 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Amplifier Transistor | |||
| |||
|
KSP8098/8099
Amplifier Transistor
⢠Collector-Emitter Voltage: VCEO= KSP8098: 60V
KSP8099: 80V
⢠Collector Power Dissipation: PC (max)=625mW
⢠Suffix â-Câ means Center Collector (1. Emitter 2. Collector 3. Base)
NPN Epitaxial Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSP8098
: KSP8099
VCEO
Collector-Emitter Voltage
: KSP8098
: KSP8099
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
80
60
80
6
500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
: KSP8098
: KSP8099
Test Condition
IC=100µA, IE=0
BVCEO
* Collector-Emitter Breakdown Voltage
: KSP8098
: KSP8099
IC=10mA, IB=0
BVEBO
ICBO
ICEO
IEBO
hFE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP8098
: KSP8099
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE (sat)
VBE (on)
fT
Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
: KSP8098
: KSP8099
Current Gain Bandwidth Product
IE=10µA, IC=0
VCB=60V, IE=0
VCB=80V, IE=0
VCE=60V, IB=0
VEB=6V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
IC=100mA, IB=5mA
IC=100mA, IB=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
f=100MHz
Cob
Output Capacitance
* Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%
VCB=5V, IE=0
f=1MHz
Min.
60
80
60
80
6
100
100
75
0.5
0.6
150
Max.
100
100
100
100
300
Units
V
V
V
V
V
nA
nA
nA
nA
0.4
V
0.3
V
0.7
V
0.8
V
MHz
6
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese