KSP75 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Darlington Transistor

KSP75/76/77
Darlington Transistor
• Collector-Emitter Voltage: V_CES= KSP75: 40V
KSP76: 50V
KSP77: 60V
• Collector Power Dissipation: P_C (max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CES
Collector-Base Voltage
: KSP75
: KSP76
: KSP77
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-50
-60
-10
-500
625
150
-55~150
Units
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
BV_CEO
Parameter
Collector-Base Breakdown Voltage
: KSP75
: KSP76
: KSP77
Test Condition
I_C= -100µA, I_B=0
BV_CBO
Collector-Base Breakdown Voltage
: KSP75
: KSP76
: KSP77
I_C= -100µA, I_E=0
I_CBO
I_EBO
I_CES
h_FE
Collector Cut-off Current
: KSP75
: KSP76
: KSP77
Emitter Cut-off Current
Collector Cut-off Current
: KSP75
: KSP76
: KSP77
DC Current Gain
V_CE (sat)
V_BE (on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V_CE= -30V, I_E=0
V_CE= -40V, I_E=0
V_CE= -50V, I_E=0
V_CE= -10V, I_B=0
V_CE= -30V, I_E=0
V_CE= -40V, I_E=0
V_CE= -50V, I_E=0
V_CE= -5V, I_C= -10mA
V_CE= -5V, I_C= -100mA
I_C= -100mA, I_B= -0.1mA
V_CE= -5V, I_C= -100mA
Min.
-40
-50
-60
-40
-50
-60
10K
10K
Max. Units
V
V
V
V
V
V
nA
-100
nA
-100
nA
-100
nA
-100
nA
-500
nA
-500
nA
-500
nA
-1.5
V
2
V
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001