KSP6520 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Amplifier Transistor

KSP6520/6521
Amplifier Transistor
• Collector-Emitter Voltage: V_CEO=25V
• Collector Power Dissipation: P_C (max)=625mW
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
BV_EBO
I_CBO
h_FE
Collector-Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
: KSP6520
: KSP6521
: KSP6520
: KSP6521
I_C=0.5mA, I_B=0
I_C=10, I_C=0
V_CB=30V, I_E=0
V_CE=20V, I_E=0
I_C=100µA, V_CE=10V
I_C=2mA, V_CE=10V
V_CE (sat)
C_ob
Collector-Emitter Saturation Voltage
Output Capacitance
I_C=50mA, I_B=5mA
V_CB=10V, I_E=0
f=100KHz
NF
Noise Figure
I_C=10µA, V_CE=5V
R_S=10KΩ
f=10Hz to 10KHz
1
TO-92
1. Emitter 2. Base 3. Collector
Value
40
25
4
100
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Min.
25
4
100
150
200
300
Typl
Max.
50
50
Units
V
V
nA
nA
400
600
0.5
V
3.5
pF
3
dB
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002