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| KSP63TA Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Darlington Transistor | |||
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KSP62/63/64
Darlington Transistor
⢠Collector-Emitter Voltage: VCES=KSP62: 20V
KSP63/64: 30V
⢠Collector Power Dissipation: PC (max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSP62
: KSP63/64
VCEO
Collector-Emitter Voltage
: KSP62
: KSP63/64
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-20
-30
-20
-30
-10
-500
625
150
-55~150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCES
Collector-Emitter Breakdown Voltage
: KSP62
: KSP63/64
IC= -100µA, IB=0
ICBO
IEBO
hFE
Collector Cut-off Current
: KSP62
: KSP63/64
Emitter Cut-off Current
* DC Current Gain
: KSP62
: KSP63
: KSP64
: KSP63
: KSP64
VCB= -15V, IE=0
VCB= -30V, IE=0
VBE= -10V, IC=0
VCE= -5V, IC= -10mA
VCE= -5V, IC= -100mA
VCE (sat)
* Collector-Emitter Saturation Voltage
: KSP62
: KSP63/64
VBE (on)
* Base-Emitter On Voltage
: KSP62
: KSP63/64
fT
Current Gain Bandwidth Product
: KSP63/64
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC= -10mA, IB= -0.01mA
IC= -100mA, IB= -0.1mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -100mA
VCE= -5V, IC= -100mA
f=100MHz
Min.
-20
-30
20K
5K
10K
10K
20K
125
Max. Units
V
V
-100
nA
-100
nA
-100
nA
-1.0
V
-1.5
V
-1.4
V
-2
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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