KSP55 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Amplifier Transistor

KSP55/56
Amplifier Transistor
• Collector-Emitter Voltage: V_CEO=KSP55: 60V
KSP56: 80V
• Collector Power Dissipation: P_C (max) =625mW
• Complement to KSP05/06
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
: KSP55
: KSP56
V_CEO
Collector-Emitter Voltage
: KSP55
: KSP56
V_CEO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Base 3. Collector
Value
-60
-80
-60
-80
-4
-500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
* Collector-Emitter Breakdown Voltage
: KSP55
: KSP56
I_C= -1mA, I_B=0
BV_EBO
I_CBO
I_CEO
h _FE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP55
: KSP56
Collector Cut-off Current
DC Current Gain
V_CE (sat)
V_BE (on)
f_T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_E= -100µA, I_C=0
V_CB= -60V, I_E=0
V_CB= -80V, I_E=0
V_CE= -60V, I_B=0
V_CE= -1V, I_C= -10mA
V_CE= -1V, I_C= -100mA
I_C= -100mA, I_B= -10mA
V_CE= -1V, I_C= -100mA
V_CE= -2V, I_C= -10mA
f=100MHz
Min. Max. Units
-60
V
-80
-4
V
-0.1
µA
-0.1
µA
-0.1
µA
50
50
-0.25
V
-1.2
V
50
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002