KSP5179 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – High Frequency Transistor

KSP5179
High Frequency Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T_a=25°C)
Derate above 25°C
P_C
Collector Power Dissipation (T_C=25°C)
Derate above 25°C
T_J
T_STG
Junction Temperature
Storage Temperature
Value
20
12
2.5
50
200
1.6
300
2.4
150
-55 ~ 150
Units
V
V
V
mA
mW
mW/°C
mW
mW/°C
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
V_CEO (sus)
BV_CBO
BV_EBO
I_CBO
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
h_FE
V_CE (sat)
V_BE (sat)
f_T
C_ob
h_fe
C_{c ⋅ rbb’}
NF
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
Collector Base Time Constant
Noise Figure
I_C=3mA, I_B=0
I_C=10µA, I_E=0
I_E=10µA, I_C=0
V_CB=15V, I_E=0
V_CB=15V, I_E=0, Ta=150°C
V_CB=1V, I_C=3mA
I_C=10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CE=6V, I_C=5mA
V_CB=10V, I_E=0, f=0.1 to1 MHz
V_CE=6V, I_C=2mA, f=1KHz
V_CE=6V, I_E=2mA, f=31.9MHz
V_CE=6V, I_C=1.5mA, f=200MHz
R_S=50Ω
Min.
12
20
2.5
25
900
25
3
Max.
0.02
1
250
0.4
1
2000
1
300
14
4.5
Units
V
V
V
µA
µA
V
V
MHz
pF
ps
dB
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002