KSP44TF Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPN Epitaxial Silicon Transistor

October 2012
KSP44/45
NPN Epitaxial Silicon Transistor
Features
• High-Voltage Transistor
• Collector-Emitter Voltage: V_CEO = KSP44: 400V
KSP45: 350V
• Collector Power Dissipation: P_C(max) = 625mW
1
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
KSP44BU
KSP44TA
KSP44TF
KSP45TA
Top Mark
KSP44
KSP44
KSP44
KSP45
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Tape and Reel
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
V_CBO Collector-Base Voltage
: KSP44
500
V
: KSP45
400
V
V_CEO Collector-Emitter Voltage
: KSP44
400
V
: KSP45
350
V
V_EBO
I_C
T_J
T_STG
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
6
V
300
mA
150
C
-55 to 150
C
Thermal Characteristics
Symbol
P_C
P_C
R_JC
R_JA
Parameter
Collector Power Dissipation (T_A = 25C)
Collector Power Dissipation (T_C = 25C)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Value
625
1.5
83.3
200
Unit
mW
W
C/W
C/W
© 2002 Fairchild Semiconductor Corporation
KSP44/45 Rev. A3
1
www.fairchildsemi.com