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| KSP44 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High Voltage Transistor | |||
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KSP44/45
High Voltage Transistor
⢠Collector-Emitter Voltage: VCEO=KSP44: 400V
KSP45: 350V
⢠Collector Power Dissipation: PC (max)=625mW
NPN Epitaxial Silicon Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSP44
: KSP45
VCEO
Collector-Emitter Voltage
: KSP44
: KSP45
VEBO
IC
PC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Ta=25°C)
Collector Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
500
400
400
350
6
300
625
1.5
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
: KSP44
: KSP45
Test Condition
IC=100µA, IB=0
BVCEO
* Collector -Emitter Breakdown Voltage
: KSP44
: KSP45
IC=1mA, IB=0
BVEBO
ICBO
ICES
IEBO
hFE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP44
: KSP45
Collector Cut-off Current
: KSP44
: KSP45
Emitter Cut-off Current
* DC Current Gain
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
Cob
Output Capacitance
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IE=100µA, IC=0
VCB=400V, IE=0
VCB=320V, IE=0
VCE=400V, IB=0
VCE=320V, IB=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=1mA, IB=0.1mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
VCB=20V, IE=0, f=1MHz
Min.
500
400
400
350
6
40
50
45
40
Max.
0.1
0.1
0.5
0.5
0.1
200
Units
V
V
V
V
V
µA
µA
µA
µA
µA
0.4
V
0.5
V
0.75
V
0.75
V
7
pF
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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