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| KSP42 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage Transistor | |||
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KSP42/43
High Voltage Transistor
⢠Collector-Emitter Voltage: VCEO=KSP42: 300V
KSP43: 200V
⢠Collector Power Dissipation: PC(max)=625mW
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector Base Voltage
: KSP42
: KSP43
VCEO
Collector-Emitter Voltage
: KSP42
: KSP43
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Base 3. Collector
Value
300
200
300
200
6
500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
: KSP42
: KSP43
Test Condition
IC=100µA, IE=0
BVCEO
* Collector -Emitter Breakdown Voltage
: KSP42
: KSP43
IC=1mA, IB=0
BVEBO
ICBO
IEBO
hFE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP42
: KSP43
Emitter Cut-off Current
: KSP42
: KSP43
* DC Current Gain
VCE (sat)
VBE (sat)
Cob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
: KSP42
: KSP43
IE=100µA, IC=0
VCB=200V, IE=0
VCB=160V, IE=0
VBE=6V, IC=0
VBE=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA, IB=2mA
IC=20mA, IB=2mA
VCB=20V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
VCE=20V, IC=10mA
f=100MHz
Min.
300
200
300
200
6
25
40
40
50
Max.
100
100
100
100
Units
V
V
V
V
V
nA
nA
nA
nA
0.5
V
0.9
V
3
pF
4
pF
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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