KSP2907A_06 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

KSP2907A
PNP General Purpose Amplifier
September 2006
tm
Features
• Collector-Emitter Voltage: VCEO= 60V
• Collector Power Dissipation: PC (max)=625mW
• Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)
• Available as PN2907A
TO-92
1 23
KSP2907A : 1. Emitter 2. Base
3. Collector
KSP2907AC : 1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-60
V_CEO
Collector-Emitter Voltage
-60
V_EBO
Emitter-Base Voltage
-5
I_C
Collector current
-600
T_J
Junction Temperature
+150
T_stg
Storage Temperature
-55 ~ +150
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
°C
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_C
R_θJC
R_θJA
Collector Power Dissipation, by R_θJA
Thermal Resistance, Junction to Case(note1)
Thermal Resistance, Junction to Ambient(note2)
Note1. Infinite heat sink.
Note2. Minimum Land pad size.
Max
625
83.3
200
Electrical Characteristics * T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
C_obo
f_T
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
I_C = -10µA, I_E = 0
I_C = -10mA, I_B = 0
I_E = -10µA, I_C = 0
V_CB = -50V, I_E = 0
V_CE = -10V, I_C = -0.1mA,
V_CE = -10V, I_C = -1mA,
V_CE = -10V, I_C = -10mA,
V_CE = -10V, I_C = -150mA,
V_CE = -10V, I_C = -500mA,
I_C = -150mA, I_B = -15mA
I_C = -500mA, I_B = -50mA
I_C = -150mA, I_B = -15mA
I_C = -500mA, I_B = -50mA
V_CB = -10V, I_E = 0, f = 1.0MHz
I_C = -50mA, V_CE = -20V,
f = 100MHz
t_ON
Turn On Time
t_OFF
Turn Off Time
V_CC= -30V, I_C = -150mA, I_B1= -15mA
V_CC= -6V, I_C = -150mA,I_B1= I_B1 = -15mA
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Units
mW
°C/W
°C/W
Min.
-60
-60
-5.0
75
100
100
100
50
200
Typ.
Max.
-10
Units
V
V
V
nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
8
pF
MHz
45
ns
100 ns
©2006 Fairchild Semiconductor Corporation
1
KSP2907A Rev. E
www.fairchildsemi.com