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| KSP24 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – VHF Transistor | |||
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VHF Transistor
KSP24
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
IEBO
IC
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Ta=25°C)
Derate Above 25°C
TJ
TSTG
RTH(j-a)
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Ambient
Value
40
30
4.0
100
350
2.8
135
-55~150
357
Units
V
V
V
mA
mW
mW/°C
°C
°C
°C/W
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Current Gain Bandwidth Product
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=15V, IE=0
VCE=10V, IC=8mA
VCE=10V, IC=8mA,
f=100MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
GCE
Conversion Gain (213 to 45MHz)
VCC=20V, IC=8mA
Oscillator Injection=150mV
GCE
Conversion Gain (60 to 45MHz)
VCC=20V, IC=8mA
Oscillator Injection=150mV
Min.
40
30
4.0
30
400
19
24
Typ.
620
0.25
24
29
Max.
50
Units
V
V
V
nA
MHz
0.36
pF
dB
dB
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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