KSP2222 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – General Purpose Transistor

KSP2222
General Purpose Transistor
• Collector-Emitter Voltage: V_CEO= 30V
• Collector Dissipation: P_C (max)=625mW
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Base 3. Collector
Value
60
30
5
600
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
h_FE
V_CE (sat)
V_BE (sat)
C_ob
f_T
Collector-Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
* Collector-Emitter Saturation Voltage
* Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
I_C=10µA, I_E=0
I_C=10mA, I_B=0
I_E=10µA, I_C=0
V_CB=50V, I_E=0
V_CE=10V, I_C=0.1mA
V_CE=10V, I_C=1mA
V_CE=10V, I_C=10mA
V_CE=10V, *I_C=150mA
V_CE=10V, *I_C=500mA
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
V_CB=10V, I_E=0, f=1MHz
V_CE=20V, I_C=20mA
f=100MHz
t_ON
Turn On Time
t_OFF
Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
V_CC=30V, V_BE(off)=0.5V
I_C=150mA, I_B1=15mA
V_CC=30V, I_C=150mA
I_B1=I_B2=15mA
Min.
60
30
5
35
50
75
100
30
250
Typ.
Max.
10
Units
V
V
V
nA
300
0.4
V
1.6
V
1.3
V
2.6
V
8
pF
MHz
35
ns
285
ns
©2000 Fairchild Semiconductor International
Rev. A, February 2000