KSP13TF Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Darlington Transistor

KSP13/14
Darlington Transistor
• Collector-Emitter Voltage: V_CES=30V
• Collector Power Dissipation: P_C (max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CES
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
30
10
500
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CES
I_CBO
I_EBO
h_FE
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
: KSP13
: KSP14
: KSP13
: KSP14
I_C=100µA, I_B=0
V_CB=30V, I_E=0
V_EB=10V, I_C=0
V_CE=5V, I_C=10mA
V_CE=5V, I_C=100mA
V_CE (sat)
V_BE (on)
f_T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
I_C=100mA, I_B=0.1mA
V_CE=5V, I_C=100mA
V_CE=5V, I_C=10mA
f=100MHz
Min.
30
5K
10K
10K
20K
125
Max.
100
100
Units
V
nA
nA
1.5
V
2.0
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002