KSP12 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Darlington Transistor

KSP12
Darlington Transistor
• Collector-Emitter Voltage: V_CES=20V
• Collector Power Dissipation: P_C (max)=625mW
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CES
V_EBO
P_C
T_J
T_STG
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
20
10
625
150
-55 ~ 150
Units
V
V
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CES
I_CBO
I_CES
I_EBO
h_FE
V_CE (sat)
V_BE (on)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I_C=100µA, I_B=0
V_CB=15V, I_E=0
V_CE=15V, I_B=0
V_EC=10V, I_C=0
V_CE=5V, I_C=10mA
I_C=10mA, I_B=0.01mA
V_CE=5V, I_C=10mA
Min.
20
20K
Typ.
Max.
100
100
100
Units
V
nA
nA
nA
1
V
1.4
V
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002