KSP10 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – VHF/UHF transistor

VHF/UHF transistor
KSP10
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
P_C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation (T_a=25°C)
Derate above 25°C
P_C
Collector Power Dissipation (T_C=25°C)
Derate above 25°C
T_J
T_STG
Rth(j-c)
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Rth(j-a)
Thermal Resistance, Junction to Ambient
1
TO-92
1. Base 2. Emitter 3. Collector
Value
30
25
3.0
350
2.8
1.0
8.0
150
-55~150
125
357
Units
V
V
V
mW
mW/°C
W
W/°C
°C
°C
°C/W
°C/W
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE (sat)
V_BE (on)
f_T
C_ob
C_rb
C_c·rbb´
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector Base Feedback Capacitance
Collector Base Time Constant
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_C=100µA, I_E=0
I_C=1mA, I_B=0
I_E=10µA, I_C=0
V_CB=25V, I_E=0
V_EB=2V, I_C=0
V_CE=10V, I_C=4mA
I_C=4mA, I_B=0.4mA
V_CE=10V, I_C=4mA
V_CE=10V, I_C=4mA, f=100MHz
V_CB=10V, I_E=0, f=1MHz
V_CB=10V, I_E=0, f=1MHz
V_CB=10V, I_C=4mA,
f=31.8MHz
Min.
30
25
3.0
60
650
0.35
Max.
100
100
Units
V
V
V
nA
nA
0.5
V
0.95
V
MHz
0.7
pF
0.65
pF
9.0
ps
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002