KSP05 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Amplifier Transistor

KSP05/06
Amplifier Transistor
• Collector-Emitter Voltage: V_CEO = KSP05: 60V
KSP06: 80V
• Collector Dissipation: P_C (max)=625mW
• Complement to KSP55/56
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector Base Voltage
: KSP05
: KSP06
V_CEO
Collector-Emitter Voltage
: KSP05
: KSP06
V_EBO
I_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1
TO-92
1. Emitter 2. Base 3. Collector
Value
60
80
60
80
4
500
625
150
-55~150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
Collector-Emitter Breakdown Voltage
: KSP05
: KSP06
I_C=1mA, I_B=0
BV_EBO
I_CBO
I_CEO
h_FE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP05
: KSP06
Collector Cut-off Current
DC Current Gain
V_CE (sat)
V_BE (on)
f_T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_E=100µA, I_C=0
V_CB=60V, I_E=0
V_CB=80V, I_E=0
V_CE=60V, I_B=0
V_CE=1V, I_C=10mA
V_CE=1V, I_C=100mA
I_C=100mA, I_B=10mA
V_CE=1V, I_C=100mA
V_CE=2V, I_C=10mA
f=100MHz
Min.
60
80
4
50
50
100
Max. Units
V
V
V
0.1
µA
0.1
µA
0.1
µA
0.25
V
1.2
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002