 English |
|
|
|
|
|
|
|
| KSH42CTF Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – General Purpose Amplifier Low Speed Switching Applications | |||
| |||
|
KSH42C
General Purpose Amplifier
Low Speed Switching Applications
⢠Lead Formed for Surface Mount Application (No Suffix)
⢠Straight Lead (I-PAK, â- Iâ Suffix)
⢠Electrically Similar to Popular TIP42C
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-6
-10
-2
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
ICES
IEBO
hFE
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = - 30mA, IB = 0
VCE = -60V, IB = 0
VCE = -100V, VBE = 0
VBE = -5V, IC = 0
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
IC = -6A, IB = -600mA
VCE = -6A, IC = -4A
VCE = -10V, IC = -500mA
Min.
-100
30
15
3
Max.
-50
-10
-0.5
75
-1.5
-2
Units
V
µA
µA
mA
V
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese