KSH350 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High Voltage Power Transistors D-PAK for Surface Mount Applications

KSH350
High Voltage Power Transistors
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T_C = 25°C)
Collector Dissipation (T_a = 25°C)
Junction Temperature
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
V_CEO(sus) * Collector-Emitter Sustaining Voltage
I_CEO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
h_FE
* DC Current Gain
* Pulse Test: PW≤300µs, Duty Cycle≤2%
I_C = -1mA, I_B = 0
V_CB = -300V, I_E =0
V_EB = -3V, I_C = 0
V_CE = -10V, I_C = -50mA
Value
- 300
- 300
-3
- 0.5
- 0.75
15
1.56
150
Units
V
V
V
A
A
W
W
°C
Min.
-300
30
Max.
-0.1
-0.1
240
Units
V
mA
mA
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002