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| KSH3055 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications | |||
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KSH3055
General Purpose Amplifier
Low Speed Switching Applications
D-PAK for Surface Mount Applications
⢠Lead Formed for Surface Mount Applications (No Suffix)
⢠Straight Lead (I-PAK, â -I â Suffix)
⢠Electrically Similar to Popular KSE3055T
⢠DC Current Gain Specified to 10A
⢠High Current Gain - Bandwidth Product:
fT = 2MHz (MIN), IC = 500mA
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
70
60
5
10
6
20
1.75
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO (sus)
ICEO
ICBO
IEBO
hFE
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = 30mA, IB = 0
VCE = 30V, IE = 0
VCB = 70V, IE = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 4A
VCE = 4V, IC = 10A
IC = 4A, IB = 0.4A
IC = 10A, IB = 3.3A
VCE = 4V, IC = 4A
VCE = 10V, IC = 500mA
Min.
60
20
5
2
Max.
50
2
0.5
100
Units
V
µA
mA
mA
1.1
V
8
V
1.8
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
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