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| KSH29CTF Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – General Purpose Amplifier Low Speed Switching Applications | |||
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KSH29/29C
General Purpose Amplifier
Low Speed Switching Applications
⢠Lead Formed for Surface Mount Application (No Suffix)
⢠Straight Lead (I-PAK, â- Iâ Suffix)
⢠Electrically Similar to Popular TIP29 and TIP29C
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
: KSH29
: KSH29C
VCEO
Collector-Emitter Voltage
: KSH29
: KSH29C
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: KSH29
: KSH29C
IC = 30mA, IB = 0
ICEO
ICES
IEBO
hFE
VCE(sat)
VBE(on)
fT
Collector Cut-off Current
: KSH29
: KSH29C
Collector Cut-off Current
: KSH29
: KSH29C
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
VCE = 40V, IB = 0
VCE = 60V, IB = 0
VCE = 40V, VBE = 0
VCE = 100V, VBE = 0
VBE = 5V, IC = 0
VCE = 4V, IC = 0.2A
VCE = 4V, IC = 1A
IC = 1A, IB = 125mA
VCE = 4A, IC = 1A
VCE = 10V, IC = 200mA
Value
40
100
40
100
5
1
3
0.4
15
1.56
150
- 65 ~ 150
Min.
40
100
40
15
3
Units
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
50
µA
50
µA
20
µA
20
µA
1
mA
75
0.7
V
1.3
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
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