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| KSH2955 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications | |||
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KSH2955
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
⢠Lead Formed for Surface Mount Applications (No Suffix)
⢠Straight Lead (I-PAK, â -I â Suffix)
⢠Electrically Similar to Popular KSE2955T
⢠DC Current Gain Specified to 10A
⢠High Current Gain - Bandwidth Product:
fT = 2MHz (MIN), IC = -500mA
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
- 70
- 60
-5
- 10
-6
20
1.75
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
ICBO
IEBO
hFE
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
* Pulse Test: PWâ¤300ms, Duty Cycleâ¤2%
IC = - 30mA, IB = 0
VCE = - 30V, IE = 0
VCB = - 70V, IE = 0
VEB = - 5V, IC = 0
VCE = - 4V, IC = - 4A
VCE = - 4V, IC = -10A
IC = - 4A, IB = - 0.4A
IC = - 10A, IB = - 3.3A
VCE = - 4V, IC = - 4A
VCE = - 10V, IC = - 500mA
Min.
-60
20
5
2
Max.
- 50
-2
- 0.5
100
Units
V
µA
mA
mA
- 1.1
-8
-1.8
V
V
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
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