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| KSH210 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications | |||
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KSH210
D-PAK for Surface Mount Applications
⢠High DC Current Gain
⢠Low Collector Emitter Saturation Voltage
⢠Lead Formed for Surface Mount Applications (No Suffix)
⢠Straight Lead (I-PAK, â - I â Suffix)
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Peck Current (Pulse)
Base Current
Collector Dissipation (TC = 25°C)
Collector Dissipation (Ta = 25°C)
Junction Temperature
Storage Temperature
Value
- 40
- 25
-8
-5
- 10
-1
12.5
1.4
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICBO
IEBO
hFE
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(sat)
* Base-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = - 10mA, IB = 0
VCB = - 40V, IE = 0
VEBO = - 8V, IC = 0
VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 2A
VCE = - 2V, IC = - 5A
IC = - 500mA, IB= - 50mA
IC = - 2A, IB = - 200mA
IC = - 5A, IB = - 1A
IC = - 5A, IB = - 1A
VCE = - 1V, IC = - 2A
VCE = - 10V, IC = - 100mA
VCB = - 10V, IE = 0, f = 0.1MHz
Min.
-25
70
45
10
65
Max.
-100
-100
180
-0.3
-0.75
-1.8
-2.5
-1.6
120
Units
V
nA
nA
V
V
V
V
V
MHz
pF
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
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