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| KSH127 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – D-PAK for Surface Mount Applications | |||
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KSH127
D-PAK for Surface Mount Applications
⢠High DC Current Gain
⢠Built-in a Damper Diode at E-C
⢠Lead Formed for Surface Mount Applications (No Suffix)
⢠Straight Lead (I-PAK, â - I â Suffix)
⢠Electrically Similar to Popular TIP127
⢠Complement to KSH122
1
D-PAK 1
I-PAK
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
- 100
V
- 100
V
-5
V
-8
A
- 16
A
- 120
mA
20
W
1.75
W
150
°C
- 65 ~ 150
°C
Equivalent Circuit
C
B
R1
R1 â
8kâ¦
R2 â
0.12kâ¦
R2
E
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
ICBO
IEBO
hFE
*Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
VBE(on)
Cob
*Base-Emitter Saturation Voltage
*Base-Emitter On Voltage
Output Capacitance
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%
IC = - 30mA, IB = 0
VCE = - 50V, IB = 0
VCB = - 100V, IE = 0
VEB = - 5V, IC = 0
VCE = - 4V, IC = - 4A
VCE = - 4V, VEB = -8A
IC = - 4A, IB = - 16mA
IC = - 8A, IB = - 80mA
IC = - 8A, IB = - 80mA
VCE = -4V, IC = - 4A
VCB = - 10V, IE = 0
f= 0.1MHz
Min.
- 100
1000
100
Max.
- 10
- 10
-2
12K
-2
-4
- 4.5
- 2.8
300
Units
V
µA
µA
mA
V
V
V
V
pF
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
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