KSE800 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

NPN EPITAXIAL
KSE800/801/803
SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN
MIN hFE= 750 @IC= 1.5 and 2.0A DC
MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector- Base Voltage
: KSE800/801
: KSE802/803
Collector-Emitter Voltage
: KSE800/801
: KSE802/803
Emitter- Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Rating
60
80
60
80
5
4
0.1
40
150
-55 ~ 150
Unit
V
V
V
V
V
A
A
W
°C
°C
TO-126
1. Emitter 2. Collector 3. Base
ELECTRICAL CHARACTERISTICS (TC=25°C)
Characteristic
Collector Emitter Breakdown Voltage
: KSE800/801
: KSE802/803
Collector Cutoff Current
: KSE800/801
: KSE802/803
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain : KSE800/802
: KSE801/803
: ALL DEVICES
Collector-Emitter Saturation Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
Base-Emitter On Voltage
: KSE800/802
: KSE801/803
: ALL DEVICES
Symbol
BVCEO
Test Condition
IC = 50mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
VCE = 60V, IB = 0
VCE = 80V, IB = 0
VCB = Rated BVCEO, IE = 0
VCB = Rated BVCEO, IE = 0
TC = 100°C
VBE = 5V, IC = 0
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
IC = 1.5A, IB = 30mA
IC = 2A, IB = 40mA
IC = 4A, IB = 40mA
VCE = 3V, IC = 1.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
Min Max Unit
60
V
80
V
100 µA
100 µA
100 _µA
500 _µA
2
mA
750
750
100
2.5
V
2.8
V
3
V
1.2
V
2.5
V
3
V
©1999 Fairchild Semiconductor Corporation
Rev. B