KSE700 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Monolithic Construction With Built-in Base- Emitter Resistors

KSE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : h_FE= 750 (Min.) @ I_C= -1.5 and -2.0A DC
• Complement to KSE800/801/802/803
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Sym-
bol
Parameter
Value
Unit
s
V_CBO Collector- Base Voltage : KSE700/701
- 60
V
: KSE702/703
- 80
V
V_CEO Collector-Emitter Voltage : KSE700/701
- 60
V
: KSE702/703
- 80
V
V_EBO
I_C
I_B
P_C
T_J
T_STG
Emitter- Base Voltage
Collector Current
Base Current
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
-5
V
-4
A
- 0.1
A
40
W
150
°C
- 55 ~ 150
°C
Equivalent Circuit
C
B
R1
R1 ≅ 10kΩ
R2 ≅ 0.6kΩ
R2
E
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
Collector-Emitter Breakdown Voltage
: KSE700/701
: KSE702/703
I_C = - 10mA, I_B = 0
I_CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(on)
Collector Cut-off Current
: KSE700/701
: KSE702/703
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KSE700/702
: KSE701/703
: ALL DEVICES
Collector-Emitter Saturation Voltage
: KSE700/702
: KSE701/703
: ALL DEVICES
Base-Emitter On Voltage
: KSE700/702
: KSE701/703
: ALL DEVICES
V_CE = - 60V, I_B = 0
V_CE = - 80V, I_B = 0
V_CB = Rated BV_CEO, I_E = 0
V_CB = Rated BV_CEO, I_E = 0
@T_C = 100°C
V_BE = - 5V, I_C = 0
V_CE = - 3V, I_C = - 1.5A
V_CE = - 3V, I_C = - 2A
V_CE = - 3V, I_C = - 4A
I_C = - 1.5A, I_B = - 30mA
I_C = - 2A, I_B = - 40mA
I_C = - 4A, I_B = - 40mA
V_CE = - 3V, I_C = - 1.5A
V_CE = - 3V, I_C = - 2A
V_CE = - 3V, I_C = - 4A
Min. Max. Units
-60
V
-80
V
-100 µA
-100 µA
-100 µA
-500 µA
-2 mA
750
750
100
-2.5
V
-2.8
V
-3
V
-1.2
V
-2.5
V
-3
V
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001