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| KSE5020S Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – High Voltage, High Quality High Speed Switching : tF=0.1μs | |||
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KSE5020
Feature
⢠High Voltage, High Quality High Speed Switching : tF=0.1µs
⢠WIDE SOA
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
1
TO-126
1. Emitter 2.Collector 3.Base
Value
800
500
7
3
6
1
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
VCEX(sus)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
IC = 1mA, IE = 0
IC = 5mA, RBE =â
IE = 1mA, IC = 0
IC = 1.5A, IB1=-IB2= 0.6A
L = 2mH, Clamped
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
tON
tS
tF
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
VCB = 500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.3A
VCE = 5V, IC = 1.5A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCB = 10V, f = 1MHz
VCE = 10V, IC = 0.3A
VCC = 200V
5IB1 = -2.5IB2=IC=2A
RL = 100â¦
Min.
800
500
7
500
Typ.
Max.
Units
V
V
V
V
10 µA
10 µA
15
50
8
1
V
1.5
V
50
pF
18
MHz
0.5
µs
3
µs
0.3
µs
hFE Classification
Classification
hFE1
R
15 ~ 30
O
20 ~ 40
Y
30 ~ 50
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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