KSE45H Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – General Purpose Power Switching Applications

KSE45H Series
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage: V_CE(sat) = -1V (MAX)@-8A
• Fast Switching Speeds
• Complement to KSE44H
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
: KSE45H 1,2
: KSE45H 4,5
: KSE45H 7,8
: KSE45H 10,11
V_EBO
I_C
I_CP
P_C
P_C
T_J
T_STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T_C=25°C)
Collector Dissipation (T_a=25°C)
Junction Temperature
Storage Temperature
Value
- 30
- 45
- 60
- 80
-5
- 10
- 20
50
1.67
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I_CES
I_EBO
h_FE
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
V_CE = Rated, V_CEO, V_EB = 0
V_EB = - 5V, I_C = 0
V_CE = - 1V, I_C = - 2A
V_CE(sat)
*Collector-Emitter Saturation Voltage
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
V_BE(sat)
*Base-Emitter Saturation Voltage
f_T
Current Gain Bandwidth Product
C_ob
Output Capacitance
t_ON
Turn ON Time
t_STG
Storage Time
t_F
Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2%
I_C = - 8A, I_B = - 0.8A
I_C = - 8A, I_B = - 0.4A
I_C = - 8A, I_B = - 0.8A
V_CE = - 10V, I_C = - 0.5A
V_CB = - 10V, f = 1MHz
V_CC =20V, I_C = - 5A
I_B1 = - I_B2 = - 0.5A
Min.
35
60
Typ.
40
230
135
500
100
Max.
-10
-100
Units
µA
µA
-1
V
-1
V
-1.5
V
MHz
pF
ns
ns
ns
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001