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| KSE44H11TU Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – General Purpose Power Switching Applications | |||
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KSE44H Series
General Purpose Power Switching Applications
⢠Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A
⢠Fast Switching Speeds
⢠Complement to KSE45H
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
: KSE44H 1,2
: KSE44H 4,5
: KSE44H 7,8
: KSE44H 10,11
VEBO
IC
ICP
PC
PC
TJ
TSTG
Emitter- Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
30
45
60
80
5
10
20
50
1.67
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
IEBO
hFE
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
: KSE44H 1,4,7,10
: KSE44H 2,5,8,11
VCE = Rated VCEO, VEB = 0
VEB = 5V, IC = 0
VCE = 1V, IC = 2A
VCE(sat)
*Collector-Emitter Saturation Voltage
: KSE44H 1, 4, 7 10
: KSE44H 2, 5, 8,11
VBE (sat)
*Base-Emitter Saturation Voltage
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
* Pulse test: PWâ¤300µs, Duty cycleâ¤2%
IC = 8A, IB = 0.8A
IC = 8A, IB = 0.4A
IC = 8A, IB = 0.8A
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC =20V, IC = 5A
IB1 = - IB2 = 0.5A
Min.
35
60
Typ.
50
130
300
500
140
Max.
10
100
Units
µA
µA
1
V
1
V
1.5
V
MHz
pF
ns
ns
ns
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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