KSE200 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Feature

KSE200
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f_T=65MHz @ I_C=100mA (Min.)
• Complement to KSE210
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Collector Dissipation (T_C=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CEO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
f_T
C_ob
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I_C=10mA, I_B=0
V_CB=40V, I_E=0
V_CB=40V, I_E=0 @ T_J=125°C
V_BE=8V, I_C=0
V_CE=1V, I_C=500mA
V_CE=1V, I_C=2A
V_CE=2V, I_C=5A
I_C=500mA, I_B=50mA
I_C=2A, I_C=200mA
I_C=5A, I_B=1A
I_C=5A, I_B=1A
V_CE=1V, I_C=2A
V_CE=10V, I_C=100mA
V_CB=10V, I_E=0, f=0.1MHz
Value
40
25
8
5
15
150
- 65 ~ 150
Units
V
V
V
A
W
°C
°C
Min.
25
70
45
10
65
Max.
100
100
100
Units
V
nA
µA
nA
180
0.3
0.75
1.8
2.5
1.6
80
V
V
V
V
V
MHz
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001