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| KSD560Y Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Low Frequency Power Amplifier | |||
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KSD560
Low Frequency Power Amplifier
⢠Low Speed Switching Industrial Use
⢠Complement to KSB601
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (Ta=25°C)
PC
Collector Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* PWâ¤10ms, Duty Cycleâ¤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
hFE1
hFE2
*DC Current Gain
VCE(sat) *Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter SaturationVoltage
tON
Turn ON Time
tSTG
Storage Time
fT
Fall Time
* Pulse Test: PWâ¤350µs, Duty Cycleâ¤2% Pulsed
VCB = 100V, IE = 0
VCE = 2V, IC = 3A
VCE = 2V, IC = 5A
IC = 3A, IB = 3mA
IC = 3A, IB = 3mA
VCC â
=â
50V, IC = 3A
IB1 = - IB2 = 3mA
RL = 16.7â¦
Value
150
100
7
5
8
0.5
1.5
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
2K
500
Typ.
6K
0.9
1.6
1
3.5
1.2
Max.
1
15K
Units
µA
1.5
V
2
V
µs
µs
µs
hFE Classification
Classification
hFE1
R
2000 ~ 5000
O
3000 ~ 7000
Y
5000 ~ 15000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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