KSD5071 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

KSD5071
NPN TRIPLE DIFFUSED
PLANAR SILICON TRANSISTOR
COLOR TV HORIZONTAL OUTPUT
APPLICATION (DAMPER DIODE BUILT IN)
• High Collector-Base Voltage (VCBO=1500V)
• High Switching Speed (tF. max=0.4µs)
ABSOLUTE MAXIMUM RATING
Characteristic
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
PC
TJ
TSTG
Rating
1500
800
6
3.5
10
50
150
-55 ~ 150
Unit
V
V
V
A
A
W
°C
°C
TO-3PF
1.Base 2.Collector 3.Emitter
ELECTRICAL CHARACTERISTICS (TC=25°C)
Characteristic
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Damper Diode Turn On Voltage
Fall Time
.
Symbol
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
VF
tF
Test Condition
VCB = 800V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 0.5A
IC = 2.5A, IB = 0.8A
IC = 2.5A, IB = 0.8A
VCE = 10V, IC = 0.5A
IF = 3.5A
IC = 3A, IB1 = 0.8A
IB2 = - 1.6A, VCC = 200V
RL = 66.7Ω
Min Typ Max Unit
10
µA
40
200
mA
8
8
V
1.5
V
3
MHz
2
V
0.4
µs
©1999 Fairchild Semiconductor Corporation
Rev B.