KSA1378 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Low Frequency Power Amplifier

KSA1378
Low Frequency Power Amplifier
• Collector Power Dissipation : P_C= 300mW
• Complement to KSC3488
1
TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T_a=25°C unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current (DC)
I_CP
* Collector Current (Pulse)
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
* PW≤10ms, Duty cycle≤50%
Ratings
-30
-25
-5
-300
-500
300
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BV_CBO
Collector-Base Breakdown Voltage
BV_CEO
Collector-Emitter Breakdown Voltage
BV_EBO
Emitter-Base Breakdown Voltage
I_CBO
Collector Cut-off Current
I_EBO
Emitter Cut-off Current
h_FE
* DC Current Gain
V_CE(sat) * Collector-Emitter Saturation Voltage
* Pulse Test: PW≤350µs, Duty cycle≤2%
I_C= -100µA, I_E=0
I_C= -10mA, I_B=0
I_E= -10µA, I_C=0
V_CB= -25V, I_E=0
V_EB= -3V, I_C=0
V_CE= -1V, I_C= -50mA
I_C= -300mA, I_B= -30mA
Min.
-30
-25
-5
70
Typ.
-0.35
Max.
-100
-100
400
-0.6
Units
V
V
nA
mA
nA
V
h_FE Classification
Classification
h_FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001