KBU8A Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes)

Discrete POWER & Signal
Technologies
KBU8A - KBU8M
Features
• High surge current capability.
• Reliable construction technique.
0.16(4.1)
0.14(3.6)
0.935(23.7)
0.895(22.7)
0.70(17.8)
0.66(16.8)
0.0760(19.3)
MAX
–
45°
+
+
~ ~+
0.085(2.2)
0.065(1.7)
0.455(11.3)
0.405(10.3)
0.280(7.1)
0.260(6.6)
• Ideal for printed circuit board.
KBU
1.0(2.54)
MIN
0.260(6.8)
0.180(4.5)
0.165(4.2)
0.150(3.8)
8.0 Ampere Silicon Bridge Rectifiers
0.220(5.6)
0.180(4.6)
Dimensions are in: inches (mm)
0.052(1.3)
0.048(1.2)
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
I_O
i_f(surge)
P_D
Rθ_JA
Rθ_JL
T_stg
T_J
Average Rectified Current
@ T_A = 50°C
Peak Forward Surge Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Temperature Range
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads.
Value
8.0
300
6.9
55
18
3.0
-55 to +150
-55 to +150
Units
A
A
W
mW /°C
°C/W
°C/W
°C
°C
Electrical Characteristics T_A = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated V_R)
Maximum Reverse Leakage,
total bridge @ rated V_R T_A = 25°C
T_A = 100°C
Maximum Forward Voltage Drop,
per bridge
@ 8.0 A
Device
8A
8B
8D
8G
8J
50
100
200
400
600
35
70
140
280
420
50
100
200
400
600
10
500
1.0
Units
8K
8M
800
1000
V
560
700
V
800
1000
V
µA
µA
V
©1999 Fairchild Semiconductor Corporation
KBU8A-KBU8M, Rev. A