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KBU6A Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SILICON SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)
Discrete POWER & Signal
Technologies
KBU6A - KBU6M
Features
• High surge current capability.
• Reliable construction technique.
0.16(4.1)
0.14(3.6)
0.935(23.7)
0.895(22.7)
0.70(17.8)
0.66(16.8)
0.0760(19.3)
MAX
–
45°
+
+
~ ~+
0.085(2.2)
0.065(1.7)
0.455(11.3)
0.405(10.3)
0.280(7.1)
0.260(6.6)
• Ideal for printed circuit board.
KBU
1.0(2.54)
MIN
0.260(6.8)
0.180(4.5)
0.165(4.2)
0.150(3.8)
6.0 Ampere Silicon Bridge Rectifiers
0.220(5.6)
0.180(4.6)
Dimensions are in: inches (mm)
0.052(1.3)
0.048(1.2)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
RθJC
Tstg
TJ
Average Rectified Current
@ TA = 65°C
Peak Forward Surge Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Case,** per leg
Storage Temperature Range
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (12 x 12 mm) copper pads.
6.0
250
6.7
54
8.6
4.0
-55 to +150
-55 to +150
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Device
6A
6B
6D
6G
6J
Peak Repetitive Reverse Voltage
50
100
200
400
600
Maximum RMS Bridge Input Voltage
35
70
140
280
420
DC Reverse Voltage (Rated VR)
50
100
200
400
600
Maximum Reverse Leakage,
total bridge @ rated VR TA = 25°C
5.0
TA = 100°C
500
Maximum Forward Voltage Drop,
per bridge
@ 6.0 A
1.0
Units
6K
6M
800 1000
V
560
700
V
800 1000
V
µA
µA
V
©1999 Fairchild Semiconductor Corporation
KBU6A-KBU6M, Rev. A