KBL005 Datasheet, PDF (1/2 Pages) Semtech Corporation – 4.0A SINGLE - PHASE SILICON BRIDGE

Discrete POWER & Signal
Technologies
KBL005 - KBL10
Features
• Ideal for printed circuit board .
• Reliable low cost construction.
• High surge current capability.
KBL
4.0 Ampere Silicon Bridge Rectifiers
0.77( 1 9. 6)
0.73( 1 8. 5)
0.255( 6. 48 )
0.245( 6. 22 )
+~ ~ –
0.645(16.38)
0.605(15.37)
1.0(25.4)
MIN
1.1(27.9)
MIN
0.052( 1. 32 )
0.048( 1. 22 )
0.210( 5. 33 )
0.190( 4. 83 )
0.08(2.0)
0.06(1.52)
Dimensions are in:
inches (mm)
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
I_O
i_f(surge)
P_D
Rθ_JA
Rθ_JL
T_stg
T_J
Average Rectified Current
@ T_A = 40°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Temperature Range
Operating Junction Temperature
4.0
200
6.58
53
19
2.4
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads.
Units
A
A
W
mW /°C
°C/W
°C/W
°C
°C
Electrical Characteristics T_A = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated V_R)
Maximum Reverse Leakage,
total bridge @ rated V_R T_A = 25°C
T_A = 100°C
Maximum Forward Voltage Drop,
per bridge
@ 4.0 A
Device
005
01
02
04
06
50
100
200
400
600
35
70
140
280
420
50
100
200
400
600
5.0
500
1.1
Units
08
10
800
1000
V
560
700
V
800
1000
V
µA
µA
V
©1999 Fairchild Semiconductor Corporation
KBL005-KBL10, Rev. A