J304 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – N-Channel RF Amplifier

J304
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as
low ON resistance analog switching.
• Sourced from process 50.
1
TO-92
1. Drain 2. Source 3. Gate
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T_C=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_GF
Forward Gate Current
T_J, T_STG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
30
-30
10
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics T_C=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V_(BR)GSS Gate-Source Breakdwon Voltage I_G = -1.0µA, V_DS = 0
-30
I_GSS
Gate Reverse Current
V_GS = -20V, V_DS = 0
V_GS(off) Gate-Source Cutoff Voltage
V_DS = 15V, I_D = 1.0nA
-2.0
On Characteristics
V
-100
pA
-6.0
V
I_DSS
gfs
goss
Zero-Gate Voltage Drain Current
Forward Transconductance
Output Conductance
V_DS = 15V, VGS = 0
V_GS = 0V, V_DS = 15V, f = 1KHz
V_GS= 0V, V_DS = 15V, f = 1KHz
5.0
4500
15
mA
7500 µS
50
µS
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.5” × 1.6” × 0.06”
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, September 2002