J271 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – P-Channel Switch

J271
P-Channel Switch
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
1
TO-92
1. Drain 2. Gate 3. Source
Absolute Maximum Ratings* T_a=25°C unless otherwise noted
Symbol
Parameter
V_DG
Drain-Gate Voltage
V_GS
Gate-Source Voltage
I_GF
Forward Gate Current
T_J, T_STG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
30
30
50
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_(BR)GSS Gate-Source Breakdwon Voltage
I_GSS
Gate Reverse Current
V_GS(off)
Gate-Source Cutoff Voltage
On Characteristics
I_G = 1.0µA, V_DS = 0
V_GS = 20V, V_DS = 0
V_DS = -15V, I_D = 1.0nA
I_DSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
V_DS = -15V, V_GS = 0
gfs
goss
Forward Transferconductance
Common- Source Output Conductance
V_GS = 0V, V_DS = 15V, f = 1.0kHz
V_GS = 0V, V_DS = 15V, f = 1.0kHz
Min.
30
1.5
-6
8000
Max. Units
V
200
pA
4.5
V
-50
mA
18000 µmhos
200 µmhos
Thermal Characteristics T_a=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, February 2004