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J111-D74Z Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /
MMBFJ112_SB51338 / MMBFJ113
N-Channel Switch
August 2012
Features
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
• Sourced from Process 51.
• Source & Drain are interchangeable.
J111
J112
J113
MMBFJ111
MMBFJ112
MMBFJ112_SB51338
MMBFJ113
G
GS D
TO-92
S
SOT-23
Mark: MMBFJ111 - 6P
D
MMBFJ112 - 6R
NOTE: Source & Drain
MMBFJ112_SB51338 - 6R
are interchangeable.
MMBFJ113 - 6S
Absolute Maximum Ratings* Ta = 25C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
35
V
VGS
Gate-Source Voltage
-35
V
IGF
Forward Gate Current
50
mA
TJ, Tstg Operating and Storage Junction Temperature Range
-55 to +150
C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25C
RJC
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Max.
J111-113 *MMBFJ111-113
625
350
5.0
2.8
125
357
556
Units
mW
mW/C
C/W
C/W
© 2012 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0
1
www.fairchildsemi.com