ISL9R460PF2 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 4A, 600V Stealth Diode

July 2003
ISL9R460PF2
4A, 600V Stealth™ Diode
General Description
The ISL9R460PF2 is a Stealth™ diode optimized for low
loss performance in high frequency hard switched
applications. The Stealth™ family exhibits low reverse
recovery current (I_RRM) and exceptionally soft recovery
under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I_RRM and short t_a phase reduce loss
in switching transistors. The soft recovery minimizes
ringing, expanding the range of conditions under which the
diode may be operated without the use of additional
snubber circuitry. Consider using the Stealth™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Formerly developmental type TA49408.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t_b / t_a > 3
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t_rr < 20ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150^oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
TO-220F
Symbol
K
A
CATHODE
ANODE
Device Maximum Ratings T_C= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
P_D
E_AVL
T_J, T_STG
T_L
T_PKG
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T_C = 108°C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (0.5A, 80mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
600
V
600
V
600
V
4
A
8
A
50
A
22
W
10
mJ
-55 to 150
°C
300
°C
260
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ISL9R460PF2 Rev. A