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| ISL9N7030BLP3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs | |||
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Data Sheet
ISL9N7030BLP3, ISL9N7030BLS3ST
January2002
30V, 0.009 Ohm, 75A, N-Channel Logic
Level UltraFET® Trench Power MOSFETs
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Packaging
ISL9N7030BLS3ST
JEDEC TO-263AB
ISL9N7030BLP3
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
PWM
Optimized
Features
⢠Fast Switching
⢠rDS(ON) = 0.0064⦠(Typ), VGS = 10V
⢠rDS(ON) = 0.010⦠(Typ), VGS = 4.5V
⢠Qg Total 24nC (Typ), VGS = 5V
⢠Qgd (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11nC
⢠CISS (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2600pF
Symbol
D
GATE
SOURCE
DRAIN
(FLANGE)
G
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
ISL9N7030BLP3
TO-220AB
7030BL
ISL9N7030BLS3ST TO-263AB (Tape and Reel) 7030BL
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
SYMBOL
PARAMETER
ISL9N7030BLP3, ISL9N7030BLS3ST
UNITS
VDSS Drain to Source Voltage (Note 1)
30
V
VDGR Drain to Gate Voltage (RGS = 20kâ¦) (Note 1)
30
V
VGS Gate to Source Voltage
±20
V
Drain Current
ID
ID
Continuous
Continuous
(TC
(TC
=
=
12050oCoC, ,VVGGSS==140.V5)V()F(iFguigruer2e)2)
ID
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
IDM
Pulsed Drain Current
75
A
48
A
15
A
Figure 4
A
PD
Power Dissipation
Derate Above 25oC
100
0.67
W
W/oC
TJ, TSTG Operating and Storage Temperature
-55 to 175
oC
TL
Tpkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
oC
260
oC
THERMAL SPECIFICATIONS
RθJC Thermal Resistance Junction to Case, TO-220, TO-263
1.5
oC/W
RθJA Thermal Resistance Junction to Ambient, TO-220, TO-263
62
oC/W
RθJA Thermal Resistance Junction to Ambient, TO-263, 1in2 copper pad area
43
oC/W
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive products.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
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