 English |
|
|
|
|
|
|
|
| ISL9N306AD3 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mΩ | |||
| |||
|
June 2003
ISL9N306AD3 / ISL9N306AD3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
30V, 50A, 6mâ¦
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
⢠Fast switching
⢠rDS(ON) = 0.0052⦠(Typ), VGS = 10V
⢠rDS(ON) = 0.0085⦠(Typ), VGS = 4.5V
⢠Qg (Typ) = 30nC, VGS = 5V
Applications
⢠DC/DC converters
⢠Qgd (Typ) = 11nC
⢠CISS (Typ) = 3400pF
DRAIN (FLANGE)
GATE
SOURCE
TO-252
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-251
D
G
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = V, RθJC = 52oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
N306AD
N306AD
Device
ISL9N306AD3ST
ISL9N306AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Ratings
30
±20
50
50
16
Figure 4
125
0.83
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
1.2
oC/W
100
oC/W
52
oC/W
Tape Width
16mm
N/A
Quantity
2500 units
75 units
©2003 Fairchild Semiconductor Corporation
ISL9N306AD3 / ISL9N306AD3ST Rev. B2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese