ISL9N304AP3 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mΩ

February 2002
PWM Optimized
ISL9N304AP3/ISL9N304AS3ST
N-Channel Logic Level UltraFET^® Trench MOSFETs
30V, 75A, 4.5mΩ
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
• Fast switching
• r_DS(ON) = 0.0036Ω (Typ), V_GS = 10V
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• r_DS(ON) = 0.0060Ω (Typ), V_GS = 4.5V
• Q_g (Typ) = 38nC, V_GS = 5V
Applications
• DC/DC converters
DRAIN
(FLANGE)
• Q_gd (Typ) = 13nC
• C_ISS (Typ) = 4075pF
SOURCE
DRAIN
GATE
D
GATE
SOURCE
TO-263
DRAIN
(FLANGE)
TO-220
G
S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 4.5V)
Continuous (T_C = 25^oC, V_GS = 10V, R_θJA = 43^oC/W)
Pulsed
P_D
Power dissipation
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Ratings
30
±20
75
74
20
Figure 4
145
0.97
-55 to 175
Units
V
V
A
A
A
A
W
W/^oC
o_C
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
1.03
62
43
o_C/W
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
N304AS
N304AP
Device
ISL9N304AS3ST
ISL9N304AP3
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002