ISL9N303AP3 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mΩ

September 2002
PWM Optimized
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
N-Channel Logic Level UltraFET® Trench MOSFETs
30V, 75A, 3.2mΩ
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
• Fast switching
• r_DS(ON) = 0.0026Ω (Typ), V_GS = 10V
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• r_DS(ON) = 0.004Ω (Typ), V_GS = 4.5V
• Q_g (Typ) = 61nC, V_GS = 5V
Applications
• DC/DC converters
• Q_gd (Typ) = 17nC
• C_ISS (Typ) = 7000pF
DRAIN
(FLANGE)
SOURCE
GATE
DRAIN
DRAIN
(FLANGE)
SOURCE
DRAIN
D
GATE
GATE
G
SOURCE
TO-220AB
TO-263AB
DRAIN
TO-262AB
(FLANGE)
S
MOSFET Maximum Ratings T_C= 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 100^oC, V_GS = 4.5V)
Continuous (T_C = 25^oC, V_GS = 10V, R_θJA = 43^oC/W)
Pulsed
Power dissipation
Derate above
T_J, T_STG Operating and Storage Temperature
Ratings
30
±20
75
75
25
Figure 4
215
1.43
-55 to 175
Units
V
V
A
A
A
W
W/^oC
o_C
Thermal Characteristics
R_θJC
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
0.7
R_θJA
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
62
R_θJA
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
43
Package Marking and Ordering Information
Device Marking
N303AS
N303AP
N303AS
Device
ISL9N303AS3ST
ISL9N303AP3
ISL9N303AS3
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
o_C/W
o_C/W
o_C/W
Quantity
800 units
50 units
50 units
©2002 Fairchild Semiconductor Corporation
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1