ISL9N2357D3ST Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET

Data Sheet
ISL9N2357D3ST
June 2002
30V, 0.007 Ohm, 35A, N-Channel
UltraFET^® Trench Power MOSFET
UltraFET^® Trench from Fairchild is a new advanced
MOSFET technology that achieves the lowest possible on-
resistance per silicon area while maintaining fast switching
and low gate charge. The reduced conduction and switching
losses extend battery life in notebook PCs, cellular
telephones and other portable information appliances and
improve the overall efficiency of high frequency DC-DC
converters used to power the latest microprocessors.
Packaging
ISL9N2357D3ST
JEDEC TO-252AA
DRAIN (FLANGE)
UltraFET^® Trench
Features
• r_DS(ON) = 0.006Ω Typical, V_GS = 10V
• Q_g Total 85nC Typical, V_GS = 10V
• Q_gd 16nC Typical
• C_ISS 5600pF Typical
Symbol
D
G
GATE
SOURCE
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
ISL9N2357D3ST
TO-252AA
N2357D
NOTE: When ordering, use the entire part number.
e.g., ISL9N2357D3ST.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
SYMBOL
PARAMETER
ISL9N2357D3ST
UNITS
V_DSS
Drain to Source Voltage (Note 1)
30
V
V_DGR
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1)
30
V
V_GS
Gate to Source Voltage
±20
V
Drain Current
I_D
I_D
Continuous
Continuous
(T_C
(T_C
=
=
1205^o0C^oC, ^V, V^{GGSS==101V0V)} )(Figure
2)
I_DM
Pulsed Drain Current
35
A
35
A
Figure 4
A
P_D
Power Dissipation
Derate Above 25^oC
100
W
0.67
W/^oC
T_J, T_STG
Operating and Storage Temperature
-55 to 175
o_C
T_L
T_pkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
o_C
260
o_C
THERMAL SPECIFICATIONS
R_θJC
R_θJA
Thermal Resistance Junction to Case, TO-252
Thermal Resistance Junction to Ambient TO-252
1.5
o_C/W
100
o_C/W
NOTE:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9N2357D3ST Rev. B1