ISL9K860P3 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 8A, 600V Stealth™ Dual Diode

April 2002
ISL9K860P3
8A, 600V Stealth™ Dual Diode
General Description
The ISL9K860P3 is a Stealth™ dual diode optimized
for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recovery current (I_RRM) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I_RRM and short t_a phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Package
JEDEC TO-220AB
CATHODE
(FLANGE)
ANODE 2
CATHODE
ANODE 1
Features
• Soft Recovery. . . . . . . . . . . . . . . . . . . . t_b / t_a > 2.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t_rr < 25ns
• Operating Temperature . . . . . . . . . . . . . . . 175^oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Symbol
K
A₁
A₂
Device Maximum Ratings (per leg) T_C= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V_RRM
V_RWM
V_R
I_F(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T_C = 147^oC)
Total Device Current (Both Legs)
600
V
600
V
600
V
8
A
16
A
I_FRM
I_FSM
P_D
E_AVL
T_J, T_STG
T_L
T_PKG
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
16
A
100
A
85
W
20
mJ
-55 to 175
°C
300
°C
260
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C