IRLW610A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

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IRLW/I610A
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ 150°C Operating Temperature
♦ Lower Leakage Current: 10µA (Max.) @ V_DS = 200V
♦ Lower R_DS(ON): 1.185Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25°C)
Continuous Drain Current (T_C=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T_A=25°C) ^*
Total Power Dissipation (T_C=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BV_DSS = 200 V
R_DS(on) = 1.5Ω
I_D = 3.3 A
D²-PAK I²-PAK
2
1
1
2
3
3
1. Gate 2. Drain 3. Source
Value
200
3.3
2.1
12
±20
29
3.3
3.3
5
3.1
33
0.26
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
R_θJC
R_θJA
R_θJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.81
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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