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IRLS610A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET | |||
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Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology
! Rugged Gate Oxide Technology
! Lower Input Capacitance
! Improved Gate Charge
! Extended Safe Operating Area
! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V
! Lower RDS(ON) : 1.185⦠(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25â)
Continuous Drain Current (TC=100â)
Drain Current-Pulsed
â
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
â¡
Avalanche Current
â
Repetitive Avalanche Energy
â
Peak Diode Recovery dv/dt
â¢
Total Power Dissipation (TC=25â)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8ï¼ from case for 5-seconds
IRLS610A
BVDSS = 200 V
RDS(on) = 0.046â¦
ID = 2.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
200
2.5
1.6
12
±20
20
2.9
1.9
5.0
19
0.15
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/â
â
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
6.6
62.5
Units
oC/W
Rev. A
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