IRLS520A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Advanced Power MOSFET

Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 10 μA (Max.) @ V_DS = 100V
n Lower R_DS(ON) : 0.176Ω (Typ.)
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J , T_STG
T_L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T_C=25℃)
Continuous Drain Current (T_C=100℃)
Drain Current-Pulsed
①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
②
Avalanche Current
①
Repetitive Avalanche Energy
①
Peak Diode Recovery dv/dt
③
Total Power Dissipation (T_C=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
IRLS520A
BV_DSS = 100 V
R_DS(on) = 0.22Ω
I_D = 7.2 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
100
7.2
5
32
±20
103
7.2
3.0
6.5
30
0.2
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
Thermal Resistance
Symbol
R_θJC
R_θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
5
62.5
Units
o_C/W
Rev. A